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H150N6HT Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H150N6HT
Description  60V Trench N-Channel MOSFET
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H150N6HT Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 2 of 6
Electrical Characteristics ( TJ= 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Test Conditions
V(BR)DSS Drain- Source Breakdown Voltage
60
--
--
V
VGS=0V,ID=250µA
IDSS
Zero Gate Voltage Drain Current (25℃)
--
--
1
µA
VDS=60V,VGS=0V
IGSS
Gate to Source Forward Leakage
--
--
100
nA
VGS=20V ,VDS=0V
Gate to Source Reverse Leakage
--
--
-100
VGS=-20V ,VDS=0V
VGS(TH) Gate Threshold Voltage
2
3
4
V
VGS=VDS,ID=250µA
RDS(on) Static Drain- to- Source On-
Resistance
--
3.5
4.2
mΩ
VGS=10V,ID=50A
Dynamic Electrical Characteristics
Ciss
Input Capacitance
--
8200
--
pF
VGS=0V
VDS=25V
f=1MHz
Coss
Output Capacitance
--
760
--
Crss
Reverse Transfer Capacitance
--
680
--
Qg
Total Gate Charge
--
185
--
nC
VDS=60V
ID=40A
VGS=10V
Qgs
Gate- to- Source Charge
--
46
--
Qgd
Gate-to-Drain(" Miller") Charge
--
70
--
Switching Characteristics
td(ON)
Turn- on Delay Time
--
27
--
nS
VDS=30V
ID=40A
RG=3Ω
VGS=10V
trise
Rise Time
--
25
--
td(OFF) Turn- OFF Delay Time
--
90
--
tfall
Fall Time
--
40
--
Source- Drain Diode Characteristics
VSD
Diode Forward Voltage
--
--
1.2
V
IF=150A,VGS=0V
trr
Reverse Recovery Time
--
80
--
nS
VR=30V,IF=40A
di/dt=100A/µs
Qrr
Reverse Recovery Charge
--
280
--
nC



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