V20202C datasheet(1/2 Pages) ISC

Part #	V20202C

Description	Schottky Barrier Diode

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Schottky Barrier Diode

V20202C

www.iscsemi.com

1

FEATURES

· Low Forward Voltage Drop, Low Power Losses

· Trench MOS Schottky Technology Gen 2

· High Efficiency Operation

APPLICATIONS

· Switching Power Supply (SPS)

· Reverse Battery Protection

· DC/DC Converters

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

200

V

IF(AV)

Average Rectified Forward Current

10×2

A

IFSM

Non-repetitive Peak Surge Current

(8.3ms Single Half Sine-Wave)

150

A

TJ

Max. Junction Temperature

175

℃

Tstg

Storage Temperature Range

-40~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case per Diode

2.2

℃

/W

Rth j-c

Thermal Resistance,Junction to Case per Device

1.3

℃

/W

TO-220 Package

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