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H06N30SA Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H06N30SA
Description  N-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H06N30SA Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Electrical Characteristics (T =25
unless otherwise specified)
A
°C
Parameter
V
Unit
V(BR)DSS
VGS(th)
IDSS
Ciss
Symbols
Drain-Source breakdown voltage
Gate threshold voltage
30
Typ.
Test Conditions
V
=0, I =250μA
G S
D
td(on)
tf
Max.
Min.
V
0.5
1.1
V
=V
, I =250μA
G S
D S
D
Zero gate voltage drain current
Gate-Source leakage current
V
=0, V
=±8V
D S
G S
nA
±10
19
Input capacitance
Output capacitance
Reverse transfer capacitance
722
130
pF
V
=0
G S
V
=15V
D S
f=1MHz
Turn-On delay time
Rise time
Turn-Of f delay time
Fall time
11
17
33
22
ns
V
=15V
D S
4.5V
V
=
G S
I =5A
D
6Ω
R =
G
Total gate charge
Gate to source charge
(
)
Gate to drain Miller charge
12.4
2.4
2.1
nC
V
=15V
D S
4.5V
V
=
G S
I =5A
D
μA
V
=30V, V
=0,T =25°C
D S
G S
J
1
Body Diode Characteristics
Parameter
Unit
VSD
Symbols
Diode Forward Voltage
Typ.
Test Conditions
V
=0, I =3A
G S
S
Max.
I =1Α
S
di/dt=100A/μs
ns
nC
9
Qrr
Reverse Recover Time
Reverse Recovery Charge
3
Min.
V
RDS(on)
Drain-Source on-State resistance
19
24
mΩ
V
=4.5V, I =6A
G S
D
IGSS
Gate resistance
RG
2.5
f = 1 MHZ, V
=V
=0
D S
G S
Ω
Coss
Crss
Qg
Qgs
Qgd
tr
td(off)
1.2
trr
23
31
mΩ
V
=2.5V, I =3A
G S
D
0.8
www.hxkj.hk
+86-769-23622090
huixin@hxkj.hk
Rev.02
Page 2 of 5



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