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H115N6HT Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H115N6HT
Description  60V Planar N-Channel MOSFET
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H115N6HT Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 2 of 6
Electrical Characteristics ( TJ= 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Test Conditions
V(BR)DSS Drain- Source Breakdown Voltage
60
--
--
V
VGS=0V,ID=250µA
IDSS
Zero Gate Voltage Drain Current (25℃)
--
--
1
µA
VDS=60V,VGS=0V
IGSS
Gate to Source Forward Leakage
--
--
100
nA
VGS=20V ,VDS=0V
Gate to Source Reverse Leakage
--
--
-100
VGS=-20V ,VDS=0V
VGS(TH) Gate Threshold Voltage
2
2.8
4
V
VGS=VDS,ID=250µA
RDS(on) Static Drain- to- Source On-
Resistance
--
7
8
mΩ
VGS=10V,ID=20A
Dynamic Electrical Characteristics
Ciss
Input Capacitance
--
2700
--
pF
VGS=0V
VDS=35V
f=1MHz
Coss
Output Capacitance
--
800
--
Crss
Reverse Transfer Capacitance
--
325
--
Rg
Gate Resistance
--
1
--
Ω
f=1MHz
Qg
Total Gate Charge
--
150
--
nC
VDS=40V
ID=20A
VGS=10V
Qgs
Gate- to- Source Charge
--
40
--
Qgd
Gate-to-Drain(" Miller") Charge
--
25
--
Switching Characteristics
td(ON)
Turn- on Delay Time
--
35
--
nS
VDS=30V
ID=20A
VGS=10V
RG=10Ω
trise
Rise Time
--
30
--
td(OFF) Turn- OFF Delay Time
--
80
--
tfall
Fall Time
--
15
--
Source- Drain Diode Characteristics
VSD
Diode Forward Voltage
--
0.8
1.2
V
IF=10A,VGS=0V
trr
Reverse Recovery Time
--
85
--
nS
VR=30V,IF=20A
di/dt=500A/µs
Qrr
Reverse Recovery Charge
--
215
--
nC



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