25CS160T-ESLASHMS datasheet(20/53 Pages) MICROCHIP

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Preliminary

DS20007008B-page 20

25CS160

6.1.2

BLOCK WRITE-PROTECT BITS

The 25CS160 contains four levels of EEPROM write

protection using the Block Protection function. The

nonvolatile Block Write-Protect bits (BP1, BP0) are

located in bits three and two of the first STATUS

Security register that is to be treated as read-only.

The four levels of array protection are:

• Level 0: No portion of the EEPROM is protected,

while the lower 32 bytes of the Security register

are read-only.

• Level 1: The upper quarter address range is

write-protected, meaning the highest order 4 Kbits

in the EEPROM are read-only. The lower 32 bytes

of the Security register are read-only.

• Level 2: The upper half address range is

write-protected, meaning the highest order 8 Kbits

in the EEPROM are read-only. The lower 32 bytes

of the Security register are read-only.

• Level 3: Both the EEPROM and Security register

are write-protected, meaning all addresses are

read-only.

The address ranges that are protected for each Block

Write Protection level and corresponding STATUS

TABLE 6-2:

BLOCK WRITE-PROTECT BITS

Level

STATUS Register Byte 0

Bits [3:2]

Protected Address Range

BP1

BP0

Memory Region

25CS160

EEPROM

None

Security Register

0000h-001Fh

EEPROM

0600h-07FFh

Security Register

0000h-001Fh

EEPROM

0400h-07FFh

Security Register

0000h-001Fh

EEPROM

0000h-07FFh

Security Register

0000h-003Fh

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