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H18N20HD Datasheet(PDF) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H18N20HD
Description  200V N-Channel MOSFET
PDF  7 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H18N20HD Datasheet(HTML) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 1 of 7
H18N20HD
200V N-Channel MOSFET
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
•
Enhanced Avalanche Ruggedness
•
Lead Free
Applications:
•
Synchronous Rectification in SMPS
•
Hard Switching and High Speed Circuit
• Power Managment
• Load Switch
Ordering Information
Part Number
Package
Marking
Packing
Qty.
H18N20HD
TO-252
H18N20HD
Tape&reel
2500 PCS
Absolute Maximun Ratings (Tc= 2 5℃ unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-to-Source Voltage
200
V
VGS
Gate- to- Source Voltage
±30
V
ID
Continuous Drain Current TC=25℃
18
A
Continuous Drain Current TC=100℃
11
IDM
Pulsed Drain Current
72
PD
Power Dissipation
130
W
EAS
Single Pulse Avalanche Engergy
L = 10mH, RG = 25 Ω,TC=25℃
580
mJ
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
℃
Thermal Characteristics
Symbol
Parameter
Typ
Max
Unit
RθJC
Thermal Resistance Junction-Case
--
0.84
℃
/ W
RθJA
Thermal Resistance Junction-Ambient
--
62.5
℃
/ W
VDSS
RDS(ON)(Typ )
ID
200V
130mΩ
18A


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