HV9982

DS20005295C-page 3

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2014-2026 Microchip Technology Inc. and its subsidiaries

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS †

VIN to GND........................................................-0.5V to +45V

VDD to GND, VDD 1-3 to GND..........................--0.3V to +10V

All other pins to GND .............................-0.3V to (VDD + 0.3V)

Operating temperature..................................-40°C to +125°C

Storage temperature .....................................-65°C to +150°C

Continuous power dissipation (TA = +25°C) ............5000 mW

† Notice: Stresses above those listed under “Absolute Maxi-

mum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the

device at those or any other conditions, above those indi-

cated in the operational listings of this specification, is not

implied. Exposure to maximum rating conditions for extended

periods may affect device reliability.

1.1

ELECTRICAL SPECIFICATIONS

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (SHEET 1 OF 3)1

Symbol

Parameter

Note

Min

Typ

Max Units Conditions

Input

VINDC

Input DC supply voltage

1

10

-

40

V

DC input voltage

IINSD

Shut-down mode supply

current

1

-

-

500

μA

EN ≤ 0.8V

IIN

Supply current

-

-

-

4.5

mA

EN ≥ 2.0V; PWMD1 = PWMD2

= PWMD3 = GND

REN

Pull-down resistor

-

75

130

160

kΩ

VEN = 5.0V

Internal Regulator

VDD

Internally regulated voltage

1

7.25

7.75

8.25

V

VIN= 12-40V; EN = HIGH;

PWMD1-3 = VDD; GATE1-3 =

1nF; CLK = 6MHz

UVLO

VDD under voltage lockout

threshold

-

6.0

-

6.5

V

VDD falling

UVLOHYST VDD under voltage hystere-

sis

-

-

500

-

mV

VDD rising

PWM Dimming (PWMD1, PWMD2 and PWMD3)

VPWMD(lo) PWMD input low voltage

1

-

-

0.8

V

---

VPWMD(hi) PWMD input high voltage

1

2.0

-

-

V

---

RPWMD

PWMD pull down resistor

-

75

130

160

kΩ

VPWMD = 5.0V

Gate (GATE1, GATE2 and GATE3)

ISOURCE Gate short circuit current,

sourcing

2

0.2

-

-

A

VGATE = 0V

ISINK

Gate sinking current

2

0.4

-

-

A

VGATE = VDD

TRISE

Gate output rise time

-

-

-

85

ns

CGATE = 1.0nF

TFALL

Gate output fall time

-

-

-

45

ns

CGATE = 1.0nF

DMAX

Maximum duty cycle

2

-

91.7

-

%

---

Note 1: Applies over the full operating ambient temperature range of 0°C < TA < +85°C.

2: For design guidance only.