STPS30L45CT datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Characteristics

STPS30L45C

4/12

Doc ID 8002 Rev 4

Figure 5.

Non repetitive surge peak forward

current versus overload duration

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(TO-220FPAB only)

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

t(s)

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

maximum values, per diode

1E-3

1E-2

1E-1

1E+0

100

120

140

t(s)

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

maximum values, per diode

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 9.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

VR(V)

IR(mA)

Tj=100°C

Tj=75°C

Tj=25°C

Tj=150°C

Tj=125°C

100

200

500

1000

2000

VR(V)

C(pF)

F=1MHz

Tj=25°C

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