HSCM020065L-A datasheet(2/8 Pages) HUIXIN

2 / 8 page

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Rev.01

Page 2 of 8

Electrical Characteristics ( TJ= 25℃ unless otherwise specified)

Symbol

Parameter

Min. Typ. Max.

Unit

Test Conditions

Note

V(BR)DSS

Drain-Source

Breakdown Voltage

650

VGS=0V,ID =100μA

VGS(th)

Gate Threshold Voltage

2.0

2.7

4.0

VGS= VDS, IDS=15mA,TC =25℃

Fig.11

2.0

VGS= VDS, IDS=15mA,TC =175℃

IDSS

Zero Gate Voltage Drain

Current

100

μA

VDS= 650V, VGS=0V

IGSS+

Gate-Source Leakage

Current

250

VGS=23V, VDS= 0V

RDS(on)

Drain-Source on-state

Resistance

mΩ

VGS=18V, ID =50A, TC =25℃

Fig.4.5

VGS=18V, ID =50A, TC =175℃

gfs

Transconductance

VGS=20V, ID =50A, TC =25℃

Fig.7

31.6

VGS=20V, ID =50A, TC =175℃

Ciss

Input Capacitance

2800

VGS=0V,

VDS=600 V,

f=10kHz，

VAC=25 mV

Fig.

17,

Coss

Output Capacitance

265

Crss

Reverse Transfer

Capacitance

Eoss

Coss Stored Energy

EON

Turn-On Switching

Energy

581

μJ

VDS =400V, VGS =-5/18V,

ID = 50A,

RG(ext) = 2.5Ω, L= 100μH

EOFF

Turn-Off Energy

128

td(on)

Turn-On Delay Time

VDS =400V, VGS =-5/18 V

ID = 40A, RG(ext) =2. 5 Ω ,

RL =10Ω

Rise Time

td(off)

Turn-Off Delay Time

122

Fall Time

RG(int)

Internal Gate Resistance

1.8

f=1 MHz, VAC=25mV

Qgs

Gate to Source Charge

VDS=400V,

VGS=-5/18V

ID = 50A

Fig.12

Qgd

Gate to Drain Charge

Total Gate Charge

139

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