 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MMST2222A Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
|
|
|||||||||||||||||||||||||||||
MMST2222A Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
|
|
2 / 3 page  BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMST2222A Document number: BL/SSSTF006 www.galaxycn.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 B 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 10 nA Emitter cut-off current IEBO VEB=3V,IC=0 10 nA DC current gain hFE VCE=10V,IC=0.1mA VCE=10V,IC=1mA VCE=10V,IC=10mA VCE=10V,IC=150mA VCE=10V,IC=500mA 35 50 75 100 40 - - - 300 - Collector-emitter saturation voltage VCE(sat) ICE=500mA,IB=50mA B ICE=150mA,IB=15mA B 0.3 1.0 V Base-emitter saturation voltage VBE(sat) ICE=500mA,IB=50mA B ICE=150mA,IB=15mA B 0.6 - 1.2 2.0 V Transition frequency fT VCE=20V, IC= 20mA,f=100MHz 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 8 pF |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
