MMST2907A datasheet(2/3 Pages) BILIN

2 / 3 page

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

MMST2907A

Document number: BL/SSSTF050

www.galaxycn.com

Rev.A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA,IE=0

-60

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA,IC=0

-5

Collector cut-off current

ICBO

VCB=-50V,IE=0

-10

DC current gain

hFE

VCE=-10V,IC=-0.1mA

VCE=-10V,IC=-1.0mA

VCE=-10V,IC=-10mA

VCE=-10V,IC=-150mA

VCE=-10V,IC=-500mA

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

-0.4

-1.6

Base-emitter saturation voltage

VBE(sat)

IC=-150mA, IB=-15mA

-1.3

-2.6

Transition frequency

VCE=-12V, IC= -2mA

f=30MHz

140

MHz

Collector output capacitance

Cobo

VCB=-10V,IE=0,f=1MHz

Collector input capacitance

Cibo

VEB=-2.0V,IC=0,f=1MHz

Turn-on time

ton

Delay time

Rise time

VCC=-30V,IC=-150mA,

IB1=-15mA

Turn-off time

toff

Storage time

Fall time

VCC=-6.0V,IC=-150mA,

IB1=IB2=-15mA

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