CY2SSTV8575
Document #: 38-07458 Rev. **
Page 5 of 8
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against
damage due to high static voltages or electric field; however,
precautions should be taken to avoid application of any volt-
age higher than the maximum rated voltages to this circuit. For
proper operation, Vin and Vout should be constrained to the
range:
VSS < (Vin or Vout) < VDD (VDDQ Voltage)
Unused inputs must always be tied to an appropriate logic volt-
age level (either VSS or VDDQ).
Notes:
3.
Unused inputs must be held high or low to prevent them from floating.
4.
All outputs switching loaded with 16pF in 60
Ω environment. See Figure 3.
Parameter
Description
Conditions
Min.
Max.
Unit
Vdd
Supply Voltage
Non Functional
–0.3
3.5
VDC
VDD
Operating Voltage
Functional
2.38
2.63
VDC
Vin
Input Voltage
Relative to VSS
–0.3
2.63
VDC
Vout
Output Voltage
Relative to VSS
–0.3
2.63
VDC
Ts
Temperature, Storage
Non Functional
–65
150
°C
Ta
Temperature, Operating Ambient
Functional
0
+85
°C
ØJc
Dissipation, Junction to Case
Functional
–
18
°C/W
ØJa
Dissipation, Junction to Ambient
Functional
–
48
°C/W
ESDh
ESD Protection (Human Body Model)
–
2K
Volts
FIT
Failure in Time
Manufacturing test
–
10
ppm
DC Parameters (AVDD = VDDO = 2.5 ±5%, Temperature = 0°C to +85°C)
Parameter
Description
Conditions
Min.
Typ.
Max.
Unit
VIL
Input Voltage, Low[3]
OE
––
0.75
V
VIH
Input Voltage, High[3]
1.75
––
V
VOL
Output Voltage, Low
VDDQ = 2.375V, IOL = 12 mA
––
0.6
V
VOH
Output Voltage, High
VDDQ = 2.375V, IOH = –12 mA
1.7
––
V
IOL
Output Low Current
VDDQ = 2.375V, VOUT = 1.2V
26
35
–
mA
IOH
Output High Current
VDDQ = 2.375V, VOUT = 1V
28
–32
–
mA
IDDQ
Dynamic Supply Current[4]
ALL VDDQ, FO = 170 MHz
–
235
300
mA.
IPDS
Power Down Current
OE = 0 or CLK/CLK#
< 20 MHz
––
100
µA.
Cin
Input pin capacitance
––
4pF
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