MMBT7002BK datasheet(2/6 Pages) HUIXIN

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Characteristics at Ta = 25

℃ unless otherwise specified

Parameter

Symbol

Min.

Typ.

Max.

Unit

STATIC PARAMETERS

Drain-Source Breakdown Voltage

at ID = 10 µA

V(BR)DSS

Zero Gate Voltage Drain Current

at VDS = 60 V

IDSS

µA

Gate-Source Leakage

at VGS = 20 V

IGSS

µA

Gate-Source Threshold Voltage

at VDS = VGS, ID = 250 µA

VGS(th)

1.1

2.1

Drain-Source On-State Resistance

at VGS = 10 V, ID =500 mA

at VGS = 5 V, ID = 50 mA

RDS(on)

1.6

DYNAMIC PARAMETERS

Gate resistance

at VDS = 0 V, f = 1 MHz

Forward Transconductance

at VDS = 10 V, ID =200 mA

gfs

307

Input Capacitance

at VDS = 10 V, VGS = 0 V, f = 1 MHz

Ciss

Output Capacitance

at VDS =10 V, VGS = 0 V, f = 1 MHz

Coss

Reverse Transfer Capacitance

at VDS = 10 V, VGS = 0 V, f = 1 MHz

Crss

Total Gate Charge

at VDS = 30 V, ID = 1 A, VGS = 10 V

at VDS = 30 V, ID = 1 A, VGS = 4.5 V

1.1

0.4

Gate to Source Charge

at VDS = 30 V, ID = 1 A, VGS = 10 V

Qgs

0.5

Gate to Drain Charge

at VDS = 30 V, ID = 1 A, VGS = 10 V

Qgd

0.2

Turn-On Delay Time

at VDD = 30 V, VGS = 10 V, ID = 1 A, Rg = 6.8 Ω

td(on)

4.8

Turn-On Rise Time

at VDD = 30 V, VGS = 10 V, ID = 1 A, Rg = 6.8 Ω

Turn-Off Delay Time

at VDD = 30 V, VGS = 10 V, ID = 1 A, Rg = 6.8 Ω

td(off)

4.4

Turn-Off Fall Time

at VDD = 30 V, VGS = 10 V, ID = 1 A, Rg = 6.8 Ω

Body-Diode PARAMETERS

Drain-Source Diode Forward Voltage

at IS = 115 mA

VSD

1.1

Body-Diode Continuous Current

350

Body Diode Reverse Recovery Time

at IS = 1 A, di/dt = 100 A / µs

trr

8.4

Body Diode Reverse Recovery Charge

at IS = 1 A, di/dt = 100 A / µs

Qrr

3.6

MMBT7002BK Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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