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PDC6906Z Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDC6906Z Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 6 page  Potens semiconductor corp. Ver.1.02 1 PDC6906Z 60V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25 ℃) 33 A Drain Current – Continuous (TC=100 ℃) 20 A IDM Drain Current – Pulsed1 132 A EAS Single Pulse Avalanche Energy2 42 mJ IAS Single Pulse Avalanche Current2 29 A PD Power Dissipation (TC=25 ℃) 44.6 W Power Dissipation – Derate above 25 ℃ 0.36 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 2.8 ℃/W BVDSS RDSON ID 60V 21m 33A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 60V, 33A, RDS(ON) =21m Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics Applications PPAK3X3 Pin Configuration D G S D G S Motor Drive Power Tools LED Lighting D D D S S |
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