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PDC6964Z Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDC6964Z Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 6 page  Potens semiconductor corp. Ver.1.01 1 PDC6964Z 60V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25 ℃) 35 A Drain Current – Continuous (TC=100 ℃) 22 A IDM Drain Current – Pulsed1 140 A EAS Single Pulse Avalanche Energy2 45 mJ IAS Single Pulse Avalanched Current2 30 A PD Power Dissipation (TC=25 ℃) 46 W Power Dissipation – Derate above 25 ℃ 0.37 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 2.7 ℃/W BVDSS RDSON ID 60V 15m 35A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 60V,35A, RDS(ON) =15m Ω @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics Applications PPAK3X3 Pin Configuration D G S D G S Motor Drive Power Tools LED Lighting Quick Charger D D D S S |
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