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PD57070STR-E Datasheet(PDF) 1 Page - STMicroelectronics

Part # PD57070STR-E
Description  RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PDF  22 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD57070STR-E Datasheet(HTML) 1 Page - STMicroelectronics

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July 2006
Rev 1
1/22
22
PD57070-E
PD57070S-E
RF POWER Transistors, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 70W with 14.7dB gain @ 945MHz / 28V
■ New RF plastic package
Description
The PD57070 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. PD57070 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first
true SMD plastic RF power package, PowerSO-
10RF. PD57070’s superior linearity performance
makes it an ideal solution for base station
applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
www.st.com
Order codes
Part number
Package
Marking
Packaging
PD57070-E
PowerSO-10RF (formed lead)
PD57070
Tube
PD57070S-E
PowerSO-10RF (straight lead)
PD57070S
Tube
PD57070TR-E
PowerSO-10RF (formed lead)
PD57070
Tape and reel
PD57070STR-E
PowerSO-10RF (straight lead)
PD57070S
Tape and reel


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