Potens semiconductor corp.

Ver.1.03

2

PDD4701

40V N+P Dual Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.04

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=40V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=6A

---

26

32

m



VGS=4.5V , ID=4A

---

36

42

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-3

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

6.5

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=20V , VGS=4.5V , ID=6A

---

5.2

10

nC

Qgs

Gate-Source Charge2 , 3

---

1.2

2.4

Qgd

Gate-Drain Charge2 , 3

---

2.5

5

Td(on)

Turn-On Delay Time2 , 3

VDD=20V , VGS=4.5V , RG=25



ID=1A

---

3.2

6

ns

Tr

Rise Time2 , 3

---

8.6

16

Td(off)

Turn-Off Delay Time2 , 3

---

18

36

Tf

Fall Time2 , 3

---

6

12

Ciss

Input Capacitance

VDS=15V , VGS=0V , F=1MHz

---

420

800

pF

Coss

Output Capacitance

---

65

120

Crss

Reverse Transfer Capacitance

---

40

80

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

15

A

ISM

Pulsed Source Current

---

---

30

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

N-CH Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.