LET9060S datasheet(1/10 Pages) STMICROELECTRONICS

Part #	LET9060S

Description	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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PRELIMINARY DATA

March, 25 2003

LET9060S

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 60 W with 17 dB gain @ 945 MHz / 26V

• NEW RF PLASTIC PACKAGE

• HIGH GAIN

• ESD PROTECTION

• AVAILABLE IN TAPE & REEL with TR SUFFIX

DESCRIPTION

The LET9060S is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 26 V in common source mode at frequencies up

to 1 GHz. LET9060S boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF. LET9060S’s

superior linearity performance makes it an ideal

solution for base station applications.

The PowerSO-10 plastic package, designed to

offer high

reliability,

is

the first ST JEDEC

approved, high power SMD package. It has been

specially

optmized for RF needs and offers

excellent RF performances and ease of assembly.

ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

7

A

PDISS

Power Dissipation

170

W

Tj

Max. Operating Junction Temperature

165

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

0.7

°C/W

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

PIN CONNECTION

GATE

SOURCE

DRAIN

PowerSO-10RF

(straight lead)

ORDER CODE

LET9060S

BRANDING

LET9060S

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