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PDEB09F0BL Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDEB09F0BL Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 6 page  Potens semiconductor corp. Ver.1.00 1 PDEB09F0BL 100V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TA=25℃) 4 A Drain Current – Continuous (TA=70℃) 3.2 A IDM Drain Current – Pulsed1 16 A EAS Single Pulse Avalanche Energy2 20 mJ IAS Single Pulse Avalanche Current2 20 A PD Power Dissipation (TA=25℃) 2 W Power Dissipation – Derate above 25℃ 0.02 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W BVDSS RDSON ID 100V 43m 4A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 100V,4A, RDS(ON) =43m Ω @VGS = 10V Improved dv/dt capability Fast switching Green Device Available ESD Protection Diode Embedded General Description Features Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Pin Configuration Applications D D D D G S S Networking Load Switch LED applications D S D D D D G D G S |
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