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PDEB3907U Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDEB3907U Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 5 page  Potens semiconductor corp. Ver.1.00 1 PDEB3907U 30V P-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25 ℃) -30 A Drain Current – Continuous (TC=100 ℃) -19 A IDM Drain Current – Pulsed1 -120 A PD Power Dissipation (TC=25 ℃) 27 W Power Dissipation – Derate above 25 ℃ 0.22 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 4.6 ℃/W BVDSS RDSON ID -30V 20m -30A These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. -30V,-30A, RDS(ON) =20mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications ESD Protection Embedded General Description Features Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN3x3 Pin Configuration D G S MB / VGA / Vcore POL Applications Load Switch LED Application D D D S S S D G |
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