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MBR1045CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR1045CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Barrier Diode MBR1045CT www.iscsemi.com 1 FEATURES · Low Forward Voltage Drop · RoHS Compliant · High Surge Current Capability APPLICATIONS · Switching Diode · Polarity Protection Diode · Re-Circulating Diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 V IF(AV) Average Rectified Forward Current 5×2 A IFSM Non-Repetitive Peak Surge Current (8.3ms Single Half Sine-Wave Superimposed on Rated Load) 100 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER TYP UNIT Rth j-c Thermal Resistance,Junction to Case per Diode 3.0 ℃ /W 3 2 1 TO-220C Package 1 3 2 Pin 1 Anode 2 Cathode 3 Anode |
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