Potens semiconductor corp.

Ver.1.00

2

PDEC39G2BZ

30V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250µA

30

---

---

V

IDSS

Drain-Source Leakage Current

VDS=27V , VGS=0V , TJ=25℃

---

---

1

µA

VDS=24V , VGS=0V , TJ=85℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±20

µA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=20A

---

4.9

5.9

m



VGS=4.5V , ID=15A

---

7.9

10.5

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250µA

1.2

1.6

2.5

V

Dynamic and switching Characteristics3

Qg

Total Gate Charge

VDS=15V , VGS=10V , ID=25A

---

13

25

nC

VDS=15V , VGS=4.5V , ID=25A

---

6.3

12

Qgs

Gate-Source Charge

---

1.1

3

Qgd

Gate-Drain Charge

---

2.2

5

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V , RG=6



ID=25A

---

2.5

5

ns

Tr

Rise Time

---

3

6

Td(off)

Turn-Off Delay Time

---

5

10

Tf

Fall Time

---

8

16

Ciss

Input Capacitance

VDS=15V , VGS=0V , F=1MHz

---

680

1400

pF

Coss

Output Capacitance

---

507

1000

Crss

Reverse Transfer Capacitance

---

27

60

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.5

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

50

A

ISM

Pulsed Source Current

---

---

100

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,Starting TJ=25℃.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings