Potens semiconductor corp.

Ver.1.00

2

PDEN2691

20V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250uA

-20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=

-20V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=

-16V , VGS=0V , TJ=125℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±25

uA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-4.5V , ID=-2A

---

25

30

m



VGS=

-2.5V , ID=-1.5A

---

34

44

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =

-250uA

-0.5

-0.8

-1.2

V

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=

-10V , VGS=-4.5V , ID=-3A

---

9.4

15

nC

Qgs

Gate-Source Charge2 , 3

---

1.1

3

Qgd

Gate-Drain Charge2 , 3

---

2.5

5

Td(on)

Turn-On Delay Time2 , 3

VDD=

-10V , VGS=-4.5V , RG=6

ID=

-3A

---

5

8

ns

Tr

Rise Time2 , 3

---

10

15

Td(off)

Turn-Off Delay Time2 , 3

---

15

25

Tf

Fall Time2 , 3

---

8

12

Ciss

Input Capacitance

VDS=

-10V , VGS=0V , F=1MHz

---

430

645

pF

Coss

Output Capacitance

---

145

220

Crss

Reverse Transfer Capacitance

---

50

75

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-5.5

A

ISM

Pulsed Source Current

---

---

-11

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings