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IS41C16100-50TL Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part # IS41C16100-50TL
Description  1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
PDF  23 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS41C16100-50TL Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

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IS41C16100
IS41LV16100
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. L
12/22/05
ISSI®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
VCC
Supply Voltage
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
0 to +70
°C
Industrial Operationg Temperature
-40 to +85
°C
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
5V
4.5
5.0
5.5
V
3.3V
3.0
3.3
3.6
VIH
Input High Voltage
5V
2.4
—
VCC + 1.0
V
3.3V
2.0
—
VCC + 0.3
VIL
Input Low Voltage
5V
–1.0
—
0.8
V
3.3V
–0.3
—
0.8
TA
Commercial Ambient Temperature
0
—
70
°C
Industrial Ambient Temperature
–40
—
85
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
Input Capacitance: A0-A9
5
pF
CIN2
Input Capacitance:
RAS, UCAS, LCAS, WE, OE
7pF
CIO
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.



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