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IS41C16100-50TL Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc |
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IS41C16100-50TL Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc |
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5 / 23 page ![]() IS41C16100 IS41LV16100 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5 Rev. L 12/22/05 ISSI® ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameters Rating Unit VT Voltage on Any Pin Relative to GND 5V –1.0 to +7.0 V 3.3V –0.5 to +4.6 VCC Supply Voltage 5V –1.0 to +7.0 V 3.3V –0.5 to +4.6 IOUT Output Current 50 mA PD Power Dissipation 1 W TA Commercial Operation Temperature 0 to +70 °C Industrial Operationg Temperature -40 to +85 °C TSTG Storage Temperature –55 to +125 °C Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.) Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 5V 4.5 5.0 5.5 V 3.3V 3.0 3.3 3.6 VIH Input High Voltage 5V 2.4 — VCC + 1.0 V 3.3V 2.0 — VCC + 0.3 VIL Input Low Voltage 5V –1.0 — 0.8 V 3.3V –0.3 — 0.8 TA Commercial Ambient Temperature 0 — 70 °C Industrial Ambient Temperature –40 — 85 °C CAPACITANCE(1,2) Symbol Parameter Max. Unit CIN1 Input Capacitance: A0-A9 5 pF CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE 7pF CIO Data Input/Output Capacitance: I/O0-I/O15 7 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz. |
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