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MBR7H35 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR7H35 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifier MBR7H35 www.iscsemi.com 1 FEATURES · Guardring For Overvoltage Protection · Low Forward Voltage Drop · High Frequency Operation APPLICATIONS · DC/DC Converters · High Frequency Rectifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Maximum repetitive peak reverse voltage 35 V IF(AV) Average Rectified Forward Current,TC= 125℃ 7.5 A IFSM Nonrepetitive Peak Surge Current tp = 8.3ms,single half sine-wave 150 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ dV/dt Voltage rate of change 10000 V/μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 7.5A ; TC= 25℃ -- 0.63 V IF= 15A ; TC= 25℃ -- 0.75 V IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ -- 50 uA Rated DC Voltage, TC= 125℃ -- 10 mA |
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