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AP8G02LI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP8G02LI
Description  20V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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Logo APME - A POWER MICROELECTRONICS

AP8G02LI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP8G02LI
20V N+P-Channel Enhancement Mode MOSFET
AP8G02LI RVE1.0
永源微電子科技有限公司
Description
The AP8G02LI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =8.5A
RDS(ON) < 35mΩ @ VGS=4.5V（Type：28mΩ）
VDS = -20V ID =-7.8A
RDS(ON) < 38mΩ @ VGS=-4.5V（Type：28mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP8G02LI
SOT23-6L
AP8G02LI
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
20
-20
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
8.5
-7.8
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
6.2
-5.5
A
IDM
Pulsed Drain Current2
28
-32
A
EAS
Single Pulse Avalanche Energy3
24
78
mJ
PD@TA=25℃
Total Power Dissipation4
1.5
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
105
℃
/W
RθJC
Thermal Resistance Junction-Case1
50
℃
/W


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