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AP3N120MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP3N120MP
Description  1200V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP3N120MP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP3N120MP
1200V N-Channel Enhancement Mode MOSFET
AP3N120MP RVE1.0
永源微電子科技有限公司
Description
The AP3N120MP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
.
General Features
VDS = 1200V ID =3.0A
RDS(ON) < 8500mΩ @ VGS=10V （Type：7500mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP3N120MP
TO-247-3L
AP3N120MP XXX YYYY
330
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
1200
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25
℃
Drain Current, VGS @ 10V
3.0
A
ID@TC=100
℃
Drain Current, VGS @ 10V
1.8
A
IDM
Drain Current - Pulsed
12
A
EAS
Single Pulsed Avalanche Energy
64.8
mJ
IAR
Avalanche Current
3.6
A
EAR
Repetitive Avalanche Energy
0.26
mJ
PD
Power Dissipation
96
W
Tj ,Tstg
Operating and Storage Temperature Range
-55 to +150
°C
RθJC
Thermal Resistance, Junction-to-Case
1.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W


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