AP4N25DF

250V N-Channel Enhancement Mode MOSFET

AP10N25D REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250µA

250

300

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ= 25

℃

VDS=250V, VGS = 0V

-

-

1

μA

IDSS

Zero Gate Voltage Drain Current TJ= 100

℃

-

-

100

μA

VGS(th)

Gate-Threshold Voltage

VDS= VGS, ID = 250µA

2.0

2.8

4.0

V

RDS(on)

Drain-Source On-Resistance2

VGS = 10V, ID = 2.5A

-

500

650

mΩ

Ciss

Input Capacitance

VDS=75V, VGS=0V,

f=1MHz

-

464

580

pF

Coss

Output Capacitance

-

424

550

Crss

Reverse Transfer Capacitance

-

21.2

30

Rg

Gate Resistance

VGS=0V, VDS Open, f=1MHz

-

25

-

Ω

Qg

Total Gate Charge

VGS=10V,VDD=100V,

ID= 10A

-

7.7

-

nC

Qgs

Gate-Source Charge

-

1.2

-

Qgd

Gate-Drain Charge

-

4.5

-

td(on)

Turn-On Delay Time

VGS=10V, VDD = 100V, RG = 6Ω,

ID= 10A

-

7.5

-

nS

tr

Rise Time

-

20

-

td(off)

Turn-Off Delay Time

-

12

-

tf

Fall Time

-

27

-

VSD

Diode Forward Voltage2

IS = 10A, VGS = 0V

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

VR = 75V,IF = 10A, dI/dt=

1A/µs

-

89

-

nS

Qrr

Body Diode Reverse Recovery Charge

-

265

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.5mH,IAS=1A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.