AP4N70FIPIF

700V N-Channel Enhancement Mode MOSFET

AP4N70F/P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS= 0 V, ID = 250 μA

700

740

V

ΔBVDSS/ ΔTJ BreakdownVoltageTemperatureCoefficient

ID=250μA, Referenced to 25°C

0.64

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS=700 V, VGS= 0 V

1

μA

VDS=520V, TC=125°C

10

μA

IGSSF

Gate-Body Leakage Current, Forward

VGS=30 V, VDS=0V

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS=-30 V, VDS=0V

-100

nA

VGS(TH)

Gate Threshold voltage

VDS=VGS, ID =250uA

2.0

3.1

4.0

V

RDS(On)

Drain-Source on-state resistance

VGS=10V, ID=2A, TJ=25°C

2.5

3.0

Ω

RDS(On)

Drain-Source on-state resistance

VGS=10V, ID=1A, TJ=25°C

2.4

3.0

Ω

Ciss

Input capacitance

VDS=25V,VGS=0V, f=1.0MHz

520

pF

Coss

Output capacitance

51

pF

Crss

Reverse transfer capacitance

4.9

pF

td(on)

Turn On Delay Time

VDD=350V, ID=4A,

RG=25Ω

(Note 4, 5)

36.5

ns

tr

Rising Time

13.2

ns

td(off)

Turn Off Delay Time

94.4

ns

tf

Fall Time

27.6

ns

Qg

Total Gate Charge

VDS=560V, ID=4A,

VGS=10V

18.4

nC

Qgs

Gate-Source Charge

3.5

nC

Qgd

Gate-Drain Charge

8.5

nC

ISM

Maximum Pulsed Drain-Source Diode Forward Current

16

A

VSD

Diode Forward Voltage

VGS=0V, IS=4A

1.4

V

trr

Reverse Recovery Time

VGS = 0V, IS=4A, dIF/dt=100 A/μs

Note 4)

608

ns

Qrr

Reverse Recovery Charge

1.18

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=4.1Mh IAS=18A, VDD=50V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.