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AP8G15NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP8G15NF
Description  150V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP8G15NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP8G15NF
150V N+P-Channel Enhancement Mode MOSFET
AP8G15NF REV1.0
永源微電子科技有限公司
Description
The AP8G15NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 150V ID =5.5A
RDS(ON) < 320mΩ @ VGS=10V （Type：250mΩ）
VDS = -150V ID =-6.2A
RDS(ON) < 320mΩ @ VGS=-10V （Type：285mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP8G15NF
PDFN5*6-8L
AP8G15NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
150
-150
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
5.5
-6.2
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
2.8
-4.9
A
IDM
Pulsed Drain Current2
13
-18
A
EAS
Single Pulse Avalanche Energy3
289
478
mJ
IAS
Avalanche Current
3
10
A
PD@TC=25℃
Total Power Dissipation4
46
52
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
1.4
℃
/W


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