AP8N06MI datasheet(1/7 Pages) APME

Part #	AP8N06MI

Description	60V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP8N06MI

60V N-Channel Enhancement Mode MOSFET

AP8N06MI REV1.1

永源微电子科技有限公司

Description

The AP8N06MI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =8A

RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP8N06MI

SOT23-3L

8N06M AP

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

8

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

4.8

A

IDM

Pulsed Drain Current2

24

A

EAS

Single Pulse Avalanche Energy3

25.5

mJ

PD@TC=25℃

Total Power Dissipation4

34.7

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

3.6

℃

/W

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