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AP8N10LI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP8N10LI
Description  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP8N10LI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP8N10LI
100V N-Channel Enhancement Mode MOSFET
AP8N10LI RVE1.0
永源微電子科技有限公司
Description
The AP8N10LI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =8A
RDS(ON) < 100mΩ@ VGS=10V （Type：80mΩ）
Application
Automative lighting
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP8N10LI
SOT23-6L
AP8N10LI
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Drain Current, VGS @ 10V
8
A
ID@TC=100
℃
Drain Current, VGS @ 10V
6.5
A
IDM
Pulsed Drain Current1
24
A
PD@TC=25
℃
Total Power Dissipation
30
W
PD@TA=25
℃
Total Power Dissipation3
2.7
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Maximum Thermal Resistance, Junctionambient
120
℃/W
RθJC
Maximum Thermal Resistance, Junction-case
3.1
℃/W


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