AP8N20SI

200V N-Channel Enhancement Mode MOSFET

AP8N20S REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

200

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=9A

---

130

170

mΩ

Static Drain-Source On-Resistance2

VGS=4.5V , ID=9A

---

150

180

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.8

2.5

V

IDSS

Drain-Source Leakage Current

VDS=160V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=160V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=9A

---

22

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2

---

Ω

Qg

Total Gate Charge (10V)

VDS=80V, VGS=10V,

ID=9A

---

45

---

nC

Qgs

Gate-Source Charge

---

9

---

Qgd

Gate-Drain Charge

---

10.5

---

Td(on)

Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3Ω，ID=9A

---

13

---

ns

Tr

Rise Time

---

8.2

---

Td(off)

Turn-Off Delay Time

---

25

---

Tf

Fall Time

---

11

---

Ciss

Input Capacitance

VDS=25V , VGS=0V , f=1MHz

---

2047

---

pF

Coss

Output Capacitance

---

109

---

Crss

Reverse Transfer Capacitance

---

70

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

8

A

ISM

Pulsed Source Current2,5

---

---

32

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=10A , dI/dt=100A/µs ,

TJ=25℃

---

37

---

nS

Qrr

Reverse Recovery Charge

---

103

---

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150

℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.