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AP8N60F-C Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP8N60F-C
Description  600V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP8N60F-C Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP8N60F-C
600V N-Channel Enhancement Mode MOSFET
AP8N60F-C REV1.0
永源微電子科技有限公司
Description
The AP8N60F-C is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 600V ID =8A
RDS(ON) < 1.4Ω @ VGS=10V （Type：1.25Ω）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP8N60F-C
TO-220-3L
AP8N60F-C XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
600
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
8.0
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
5.0
A
IDM
Pulsed Drain Current
(note1)
26
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
700
mJ
IAS
Avalanche Current
20
A
PD
Power Dissipation (TC = 25ºC)
32.9
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
2.05
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
62.5
ºC/W


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