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AP10N10DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP10N10DF
Description  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP10N10DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP10N10DF
100V N-Channel Enhancement Mode MOSFET
AP10N10DF REV1.0
永源微電子科技有限公司
Description
The AP10N10DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =10A
RDS(ON) < 100mΩ@ VGS=10V （Type：85mΩ）
Application
Automative lighting
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP10N10DF
PDFN3*3-8L
AP10N10DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Drain Current, VGS @ 10V
10
A
ID@TC=100
℃
Drain Current, VGS @ 10V
6.5
A
IDM
Pulsed Drain Current1
25
A
PD@TC=25
℃
Total Power Dissipation
44
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Maximum Thermal Resistance, Junctionambient
85
℃/W
RθJC
Maximum Thermal Resistance, Junction-case
6
℃/W


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