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AP10P04D Datasheet(PDF) 2 Page - A POWER MICROELECTRONICS |
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AP10P04D Datasheet(HTML) 2 Page - A POWER MICROELECTRONICS |
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2 / 7 page ![]() AP10P04D -40V P-Channel Enhancement Mode MOSFET AP10P04D RVE1.0 臺灣永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 -47 --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.015 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-8A --- 60 65 mΩ VGS=-4.5V , ID=-4A --- 85 100 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- 3.52 --- V/℃ IDSS Drain-Source Leakage Current VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 6 --- S Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=- 8A --- 5.8 --- nC Qgs Gate-Source Charge --- 1.2 --- Qgd Gate-Drain Charge --- 2.1 --- Td(on) Turn-On Delay Time VDD=-12V , VGS=-10V , RG=3.3Ω, ID=-1A --- 13.2 --- ns Tr Rise Time --- 8 --- Td(off) Turn-Off Delay Time --- 40 --- Tf Fall Time --- 3.5 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 620 --- pF Coss Output Capacitance --- 69 --- Crss Reverse Transfer Capacitance --- 52 --- IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -16 A ISM Pulsed Source Current2,5 --- --- -32 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD =-25V,V GS =-10V,L=0.1mH,I AS =-20.5A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation |
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