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ST7LITEU05 Datasheet(PDF) 88 Page - STMicroelectronics |
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ST7LITEU05 Datasheet(HTML) 88 Page - STMicroelectronics |
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88 / 115 page ![]() ST7LITEU05 ST7LITEU09 88/115 EMC CHARACTERISTICS (Cont’d) 13.7.2 Electro Magnetic Interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/ 3 which specifies the board and the loading of each pin. Note: 1. Data based on characterization results, not tested in production. 13.7.3 Absolute Maximum Ratings (Electrical Sensitivity) Based on three different tests (ESD, LU and DLU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, re- fer to the application note AN1181. 13.7.3.1 Electro-Static Discharge (ESD) Electro-Static Discharges (a positive then a nega- tive pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated: Human Body Model. This test conforms to the JESD22- A114A/A115A standard. Absolute Maximum Ratings Note: 1. Data based on characterization results, not tested in production. Symbol Parameter Conditions Monitored Frequency Band Max vs. [fOSC/fCPU] Unit -/8MHz SEMI Peak level VDD=5 V, TA=+25 °C, SO8 package, conforming to SAE J 1752/3 0.1 MHz to 30 MHz 20 dB µV 30 MHz to 130 MHz 20 130 MHz to 1 GHz 13 SAE EMI Level 2.5 - Symbol Ratings Conditions Maximum value 1) Unit VESD(HBM) Electro-static discharge voltage (Human Body Model) 4000 V VESD(CDM) Electro-static discharge voltage (Charge Device Model) TA=+25 °C 500 V 1 |
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