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AP13N50F-B Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP13N50F-B Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 9 page  AP13N50FIPIT-B 500V N-Channel Enhancement Mode MOSFET AP13N50F/P/T-B REV1.0 永源微電子科技有限公司 Description The AP13N50F/P/T-B is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 500V ID =13A RDS(ON) < 500mΩ @ VGS=10V （Type：420mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP13N50F TO-220F-3L AP13N50F XXX YYYY 1000 AP13N50P TO-220-3L AP13N50P XXX YYYY 1000 AP13N50T TO-263-3L AP13N50T XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage (VGS = 0V) 500 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 13 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 9.2 A IDM Pulsed Drain Current (note1) 52 A VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy (note2) 400 mJ IAS Avalanche Current (note1) 13 A PD Power Dissipation (TC = 25ºC) 31 W TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 ºC RthJC Thermal Resistance, Junction-to-Case 3.92 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 62.5 ºC/W |
Similar Part No. - AP13N50F-B |
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Similar Description - AP13N50F-B |
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