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STP4N150 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP4N150
Description  N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP4N150 Datasheet(HTML) 3 Page - STMicroelectronics

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STFV4N150 - STFW4N150 - STP4N150 - STW4N150
Electrical ratings
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 TO-247 TO-220FH TO-3PF
VDS
Drain-source voltage (VGS = 0)
1500
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at
TC = 25 °C
44
4 (1)
4 (1)
A
ID
Drain current (continuous) at
TC = 100 °C
2.5
2.5
2.5 (1)
2.5 (1)
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
12
12
12 (1)
12 (1)
A
PTOT
Total dissipation at TC = 25 °C
160
40
Tbd
W
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 TO-247 TO-220FH TO-3PF
Rthj-case
Thermal resistance junction-case
max
0.78
3.12
Tbd
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
62.5
50
62.5
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
4A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
350
mJ



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