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AP20G04NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP20G04NF
Description  40V NP-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP20G04NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20G04NF
40V N+P-Channel Enhancement Mode MOSFET
AP20G04NF RVE1.0
臺灣永源微電子科技有限公司
Product ID
Pack
Marking
Qty(PCS)
AP20G04NF
PDFN5*6-8L
AP20G04NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
23
-20
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
18
-16
A
IDM
Pulsed Drain Current2
46
-40
A
EAS
Single Pulse Avalanche Energy3
28
66
mJ
IAS
Avalanche Current
17.8
-27.2
A
PD@TC=25℃
Total Power Dissipation4
25
31.3
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
5
℃
/W
Description
The AP20G04NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 40V ID =23 A
RDS(ON) < 18mΩ @ VGS=10V
VDS = -40V ID = -20A
RDS(ON) < 32mΩ @ VGS=10V
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information


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