AP20P03D

-30V P-Channel Enhancement Mode MOSFET

AP20P03D REV1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

---

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.023

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-10A

---

35

42

mΩ

VGS=-4.5V , ID=-4A

---

52

70

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-1.5

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

4

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=-24V, VGS=0V, TJ=25

℃

---

---

1

uA

VDS=-24V, VGS=0V, TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V, ID=-15A

---

12

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-15V, VGS=-4.5V,

ID=-15A

---

6.1

---

nC

Qgs

Gate-Source Charge

---

3.1

---

Qgd

Gate-Drain Charge

---

1.8

---

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-10V ,

RG=3.3Ω

ID=-15A

---

2.6

---

ns

Tr

Rise Time

---

8.6

---

Td(off)

Turn-Off Delay Time

---

33.6

---

Tf

Fall Time

---

6

---

Ciss

Input Capacitance

VDS=-15V, VGS=0V

f=1MHz

---

585

---

pF

Coss

Output Capacitance

---

100

---

Crss

Reverse Transfer Capacitance

---

85

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-20

A

ISM

Pulsed Source Current2,5

---

---

-40

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

trr

Reverse Recovery Time

IF=-15A , dI/dt=100A/µs ,

TJ=25

℃

---

6.1

---

nS

Qrr

Reverse Recovery Charge

---

1.4

---

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.