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AP40H03NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP40H03NF
Description  30V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP40H03NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP40H03NF
30V N+N-Channel Enhancement Mode MOSFET
AP40H03NF REV1.0
永源微電子科技有限公司
Description
The AP40H03NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =4A
RDS(ON) < 8.5@ VGS=10V (Type：6.5mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP40H03NF
PDFN5*6-8L
AP40H03NF XXXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
40
A
ID@TC=75℃
Continuous Drain Current, VGS @ 10V1
32
A
IDM
Pulsed Drain Current2
120
A
EAS
Single Pulse Avalanche Energy3
120
mJ
IAS
Avalanche Current
20
A
PD@TC=25℃
Total Power Dissipation4
29
W
PD@TA=25℃
Total Power Dissipation4
2.72
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJC
Thermal Resistance Junction-Case1
2.72
℃/W
RθJA
Thermal Resistance Junction-Ambient 1
25
℃/W


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