M28C16A datasheet(6/19 Pages) STMICROELECTRONICS

6 / 19 page

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VCC

µA

ILO

Output Leakage Current

≤ VIN ≤ VCC

µA

ICC

(1)

Supply Current (TTL and CMOS inputs)

E = VIL,G = VIL ,f = 5 MHz

ICC2

(1)

Supply Current (Standby) CMOS

E > VCC –0.3V

µA

VIL

Input Low Voltage

–0.3

0.6

VIH

Input High Voltage

VCC + 0.5

VOL

Output Low Voltage

IOL = 2.1 mA

0.2 VCC

VOH

Output High Voltage

IOH = –400

µA

0.8 VCC

Note: 1. All I/O’s open circuit.

Table 8. Read Mode DC Characteristics for M28C16A-W

(TA = –40 to 85

°C, VCC = 2.7V to 3.6V)

Symbol

Parameter

Min

Max

Unit

tPUR

Time Delay to Read Operation

µs

tPUW

Time Delay to Write Operation (once VCC

≥ VWI)10

VWI

Write Inhibit Threshold

1.5

2.5

Note: 1. Sampled only, not 100% tested.

Table 9. Power Up Timing for M28C16A-W (1)

(TA = –40 to 85

°C, VCC = 2.7V to 3.6V)

Symbol

Parameter

Min

Max

Unit

tPUR

Time Delay to Read Operation

µs

tPUW

Time Delay to Write Operation (once VCC

≥ VWI)10

VWI

Write Inhibit Threshold

1.5

2.5

Note: 1. Sampled only, not 100% tested.

Table 7. Power Up Timing for M28C16A and M28C17A (1)

(TA = –40 to 85

°C, VCC = 4.5V to 5.5V)

6/19

M28C16A, M28C17A

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