M28C16B datasheet(7/17 Pages) STMICROELECTRONICS

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M28C16B, M28C17B

Table 6A. Read Mode DC Characteristics for M28CxxB (5V range)

(TA = 0 to 70 °C or -40 to 85 °C; VCC = 4.5 to 5.5 V)

Note: 1. All inputs and outputs open circuit.

Table 6B. Read Mode DC Characteristics for M28CxxB-W (3V range)

(TA = 0 to 70 °C or -40 to 85 °C; VCC = 2.7 to 3.6 V)

Note: 1. All inputs and outputs open circuit.

Symbol

Parameter

Test Condition

Min.

Max.

Unit

ILI

Input Leakage Current

≤ VIN ≤ VCC

µA

ILO

Output Leakage Current

0 V

≤ VOUT ≤ VCC

µA

ICC

Supply Current (TTL inputs)

E = VIL, G = VIL , f = 5 MHz

Supply Current (CMOS inputs)

E = VIL, G = VIL , f = 5 MHz

ICC1

Supply Current (Stand-by) TTL

E = VIH

1mA

ICC2

Supply Current (Stand-by) CMOS

E > VCC - 0.3V

100

µA

VIL

Input Low Voltage

-0.3

0.8

VIH

Input High Voltage

VCC + 0.5

VOL

Output Low Voltage

IOL = 2.1 mA

0.4

VOH

Output High Voltage

IOH = -400 µA

2.4

Symbol

Parameter

Test Condition

Min.

Max.

Unit

ILI

Input Leakage Current

≤ VIN ≤ VCC

µA

ILO

Output Leakage Current

≤ VOUT ≤ VCC

µA

ICC

Supply Current (CMOS inputs)

E = VIL, G = VIL , f = 5 MHz, VCC = 3.3V

E = VIL, G = VIL , f = 5 MHz, VCC = 3.6V

ICC2

Supply Current (Stand-by) CMOS

E > VCC - 0.3V

µA

VIL

Input Low Voltage

-0.3

0.6

VIH

Input High Voltage

VCC + 0.5

VOL

Output Low Voltage

IOL = 1.6 mA

0.2 VCC

VOH

Output High Voltage

IOH = -400 µA

0.8 VCC

cessive Write operations, up to tWLQ5H (defined in

Table 10A). The DQ5 line is held low to show

when this timer is running (hence showing that the

device has received one write operation, and is

waiting for the next). The DQ5 line is held high

when the counter has overflowed (hence showing

that the device is now starting the internal write to

the memory array).

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