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Comchip Technology CO., LTD.

QW-JP157

REV:A

SMD ESD Protection Diode

RoHS Device

Halogen Free

CPDUT7VMUAHT-HF

Dimensions in inches and (millimeter)

DFN1610-2L

0.022(0.55)

0.018(0.45)

0.002(0.05)

Max.

0.065(1.65)

0.061(1.55)

0.041(1.05)

0.037(0.95)

0.033(0.85)

0.030(0.75)

0.018(0.45)

0.014(0.35)

0.043(1.10)

BSC

0.006(0.15)

0.010(0.25)

0.006(0.15)

0.010(0.25)

Mechanical data

- Case: DFN1610-2L package,

molded plastic.

- Mounting position: Any.

- Polarity: Indicated by cathode band.

Circuit Diagram

Forward voltage

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating temperature range

TJ

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

Reverse leakage current

IR

µA

VRWM = 7V

Clamping voltage

V

V

Working peak reverse voltage

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

7

7.8

9

707

TLP = 16A, TP = 0.2/100ns

VC

-55 to +125

±30

100

9

1600

1

Clamping voltage

VC

IPP = 20A, TP = 8/20µs

V

IF = 15mA

VF

0.6

V

1.2

Storage temperature range

TSTG

°C

-55 to +150

10.5

Features

- IEC 61000-4-2 (ESD) ±30kV (air/contact)

IEC 61000-4-4 (EFT) 80A (5/50ns)

IEC 61000-4-5 (Lightning) 100A (8/20µs)

- ESD/Surge protection for 1 line with Unidirectional.

- High surge protection.

- Fast turn-on and low clamping voltage.

0.008(0.20)

0.004(0.10)

Pin 1

Pin 2

IPP = 100A, TP = 8/20µs

VC

14

16