TCND5000 datasheet(2/10 Pages) VISHAY

2 / 10 page

www.vishay.com

Document Number 83795

Rev. 1.2, 04-Sep-06

TCND5000

Vishay Semiconductors

Sensor

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Input (Emitter)

see figures 2 to 8 accordingly

Parameter

Test condition

Symbol

Value

Unit

Operating Temperature Range

Tamb

- 40 to + 85

°C

Storage Temperature Range

Tstg

- 40 to + 100

°C

Soldering Temperature

acc. fig. 14

Tsd

260

°C

Figure 1. Forward Current Limit vs. Ambient Temperature

100

120

16188

amb - Ambient Temperature (°C)

100

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward Voltage

IF = 20 mA, tp = 20 ms

1.2

1.5

Temp. Coefficient of VF

IF = 1 mA

TKVF

- 1.3

mV/K

Reverse Current

VR = 5 V

µA

Junction Capacitance

VR = 0 V, f = 1 MHz, E = 0

Radiant Intensity

IF = 20 mA, tp = 20 ms

775

mW/sr

Angle of Half Intensity

± 12

deg

Peak Wavelength

IF = 100 mA

930

940

Spectral Bandwidth

IF = 100 mA

Δλ

Temp. Coefficient of

IF = 100 mA

0.2

nm/K

Rise Time

IF = 100 mA

800

Fall Time

IF = 100 mA

800

Virtual Source Diameter

Method: 63 % encircled energy

1.2

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