AP60G02NF

20V N+P-Channel Enhancement Mode MOSFET

AP60G02NF REV1.0

永源微電子科技有限公司

N-Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

24

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

0.5

0.7

1.2

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS=4.5V, ID=20A

-

4.8

6.5

mΩ

VGS=2.5V, ID=15A

-

5.8

8.0

Ciss

Input Capacitance

VDS=10V, VGS=0V,

f = 1.0MHz

-

2500

-

pF

Coss

Output Capacitance

-

407

-

pF

Crss

Reverse Transfer Capacitance

-

386

-

pF

Qg

Total Gate Charge

VDS=10V, ID=30A,

VGS=4.5V

-

32

-

nC

Qgs

Gate-Source Charge

-

3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

11

-

nC

td(on)

Turn-on Delay Time

VDS=10V,

ID=30A, RGEN=3Ω,

VGS =4.5V

-

17

-

ns

tr

Turn-on Rise Time

-

49

-

ns

td(off)

Turn-off Delay Time

-

74

-

ns

tf

Turn-off Fall Time

-

26

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

75

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

300

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS=30A

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、EAS condition: TJ=25℃, VDD =16V,V GS =4.5V ,L=0.1mH，RG=25Ω，ID=30A

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.