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AP60H03GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP60H03GD
Description  30V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP60H03GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP60H03GD
30V N+N-Channel Enhancement Mode MOSFET
AP60H03GD RVE1.0
永源微電子科技有限公司
Description
The AP60H03GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =60A
RDS(ON) < 7.5mΩ @ VGS=10V （Type：6.0mΩ）
Application
VBUS
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP60N03D
TO-252-4L
AP60N03D XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
60
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
40
A
IDM
Pulsed Drain Current2
92
A
EAS
Single Pulse Avalanche Energy3
157.8
mJ
IAS
Avalanche Current
34
A
PD@TC=25
℃
Total Power Dissipation4
29
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient 1
62.5
℃/W
RθJC
Thermal Resistance Junction-Case1
4.32
℃/W


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