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AP60H06DF2 Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP60H06DF2 Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP60H06DF2 65V N-Channel Enhancement Mode MOSFET AP60H06DF2 REV1.0 永源微電子科技有限公司 Description The AP60H06DF2 uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =60A RDS(ON) < 15mΩ @ VGS=10V (Type:12mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP60H06DF2 DFN3*3B-8L AP60H06DF2 XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Value Unit VDS Drain source voltage 65 V VGS Gate source voltage ±20 V ID@TA=25 ℃ Continuous drain current 60 A ID@TA=70 ℃ Continuous drain current 24 A IDM Pulsed drain current 180 A PD@TA=25 ℃ Power dissipation 31 W EAS Single pulsed avalanche energy 20 mJ TSTG Storage Temperature Range -55 to 150 ℃ Tj Operation and storage temperature -55 to 150 ℃ RθJC Thermal resistance, junction-case 4.0 °C/W RθJA Thermal resistance, junction-ambient5 85 °C/W |
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