AP60H06NF2

65V N-Channel Enhancement Mode MOSFET

AP60H06NF2 REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250µA

65

72

-

V

lGSS

Gate-body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS=65V, VGS=0V

1

μA

IDSS TJ=100°C

100

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=250µA

1.2

1.7

2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS=10V, ID=20A

-

7.5

9.0

mΩ

RDS(on)

Drain-Source On-Resistance4

VGS=4.5V, ID=10A

11

13

mΩ

gfs

Forward Transconductance4

VDS = 10V, ID = 10A

-

45

-

S

Ciss

Input Capacitance

VDS=30V, VGS=0V, f =1MHz

-

1210

-

pF

Coss

Output Capacitance

-

343

-

Crss

Reverse Transfer Capacitance

-

17

-

Rg

Gate Resistance

f=1MHz

-

1.5

-

Ω

Qg

Total Gate Charge

VGS=10V, VDS=30V,

ID= 10A

-

21.7

-

nC

Qgs

Gate-Source Charge

-

3.9

-

Qgd

Gate-Drain Charge

-

4.5

-

td(on)

Turn-On Delay Time

VGS=10V, VDD=30V,

RG= 3Ω, ID=10A

-

7.3

-

ns

tr

Rise Time

-

8.5

-

td(off)

Turn-Off Delay Time

-

19.6

-

tf

Fall Time

-

5.6

-

trr

Body Diode Reverse Recovery Time

IF=10A, dl/dt=100A/μs

-

34

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

17

-

nC

VSD

Diode Forward Voltage4

IS=10A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TA=25°C

-

-

65

A

Note

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation